Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor‐phase epitaxy using tertiarybutylarsine
作者： T. Okabe , T. Kikkawa , H. Tanaka , M. Takikawa , J. Komeno
DOI: 10.1063/1.346243
关键词:
摘要: The EL2 concentration in GaAs grown by metalorganic vapor‐phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) was measured deep‐level transient spectroscopy. decreases monotonically with increasing growth temperature. Taking the origin of into consideration, we discuss mechanisms MOVPE tBAs. is affected incorporation excess As crystal, and, therefore, depends on kind reactant surface. We propose a model which surface changes from As2H2 to As2 temperature dependence explained our where dissociates atomic and gives crystal.
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