Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE
作者： T. Kikkawa , H. Tanaka , J. Komeno
DOI: 10.1007/BF02660459
关键词:
摘要: We investigate differences in Si doping of GaAs and AIGaAs between group-V sources. Si2H6 SiH4 dependence on growth temperature, V/III ratio, total flow rate, off angle substrate orientation was examined using tertiarybu-tylarsine (TBAs), monoethylarsine (EtAs), arsine with a horizontal atmospheric pressure reactor. With either dopant source, incorporation for films grown TBAs or EtAs always higher than that arsine. Using silane, temperature gas velocity is different disilane, ratio These results imply phase reactions play an important role. From the kinetic simulation decomposition sources, we verified concentrations AsH3, AsH2, AsH vapor near are quite among AsH2 dominant reactant when TBAs. propose H2AsSiH3 (silylarsine) formed by reaction radical silylarsine should contribute reactions, resulting high efficiency EtAs. also suggest AsH3 inhibits incorporation.
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Dimitrios I. Fotiadis, Shigekazu Kieda, Klavs F. Jensen, Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy Journal of Crystal Growth. ,vol. 102, pp. 441- 470 ,(1990) , 10.1016/0022-0248(90)90403-8
Gerald B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice ,(1989)
R.J. Field, S.K. Ghandhi, Doping of gallium arsenide in a low pressure organometallic CVD system Journal of Crystal Growth. ,vol. 74, pp. 543- 550 ,(1986) , 10.1016/0022-0248(86)90200-9
M. Shimazu, K. Kamon, K. Kimura, M. Mashita, M. Mihara, M. Ishii, Silicon doping using disilane in low-pressure OMVPE of GaAs Journal of Crystal Growth. ,vol. 83, pp. 327- 333 ,(1987) , 10.1016/0022-0248(87)90294-6
X. Tang, J. te Nijenhuis, Y. Li, L.J. Giling, The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPE Journal of Crystal Growth. ,vol. 107, pp. 263- 267 ,(1991) , 10.1016/0022-0248(91)90468-K
B. I. Miller, M. G. Young, M. Oron, U. Koren, D. Kisker, High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine Applied Physics Letters. ,vol. 56, pp. 1439- 1441 ,(1990) , 10.1063/1.102491
Max Tirtowidjojo, Richard Pollard, The influence of reactor pressure on rate-limiting factors and reaction pathways in MOVPE of GaAs Journal of Crystal Growth. ,vol. 98, pp. 420- 438 ,(1989) , 10.1016/0022-0248(89)90159-0
Bernard S. Meyerson, Joseph M. Jasinski, Silane pyrolysis rates for the modeling of chemical vapor deposition Journal of Applied Physics. ,vol. 61, pp. 785- 787 ,(1987) , 10.1063/1.338180
Chee‐Wee Liu, Sheng‐Li Chen, Jyh‐pyng Lay, Si‐Chen Lee, Hao‐Hsiung Lin, Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source Applied Physics Letters. ,vol. 51, pp. 1634- 1636 ,(1987) , 10.1063/1.98579
T. Kikkawa, H. Tanaka, J. Komeno, MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor Journal of Crystal Growth. ,vol. 107, pp. 370- 375 ,(1991) , 10.1016/0022-0248(91)90488-Q