Structural properties of GaAs grown on (100) Si substrates by MOCVD
作者： Hyeon-Soo Kim , Yong Kim , Moo-Sung Kim , Suk-Ki Min
DOI: 10.1016/0022-0248(88)90036-X
关键词: Si substrate 、 Lattice constant 、 Lattice (order) 、 Misorientation 、 Materials science 、 Double crystal 、 Crystallography 、 Layer thickness 、 Metalorganic vapour phase epitaxy
摘要: Abstract Structural properties (lattice parameters, misorientation, and crystal quality) of 1–5.5 μ m thick GaAs layers grown on exact (100) Si 3° off-oriented substrates have been measured by DCX (double X-ray) diffractometry. The lattice constants normal (α⊥) parallel (α∥) to the interface are 5.6473 A 5.6639-5.6745 A, respectively; α⊥ does not d epend layer thickness, but α∥ depends thickness in range m. Except for case substrate, [100] direction is between surface magnitude relative tilt directions about 0.05°.
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