Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy
作者： Yuichi Kawamura , Hiroshi Okamoto
DOI: 10.1063/1.326441
关键词: X-ray absorption spectroscopy 、 Epitaxy 、 Molecular beam epitaxy 、 Condensed matter physics 、 Misorientation 、 Crystal structure 、 Tetragonal crystal system 、 Crystallography 、 Materials science 、 Lattice (order) 、 Monochromator
摘要: Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy is measured from rocking curves an x‐ray double‐crystal monochrometer. It concluded that the are deformed cubic to tetragonal misoriented except in lattice‐matched epilayers. This result suggests substrate lattice has a large influence structure layers.
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