Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy
作者： S. K. Ghandhi , J. E. Ayers
DOI: 10.1063/1.100020
关键词:
摘要: … Hthe mosaic GaAs is assumed to consist of many subcrystals with … From this we can calculate the paraHel strain and in-plane lattice … If the film is then cooled to room temperature while …
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sci-hub.se 参考文章(4)
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