Mechanism of strain relaxation and defect introduction in Ge-GaAs heterostructure: influence of ultrasound treatment
作者： T.G. Kryshtab , M.A. Mazin , I.V. Prokopenko , G.N. Semenova
DOI: 10.1109/SMICND.1996.557404
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sci-hub.se 参考文章(1)
Yuichi Kawamura, Hiroshi Okamoto, Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy Journal of Applied Physics. ,vol. 50, pp. 4457- 4458 ,(1979) , 10.1063/1.326441