作者: Pijush Bhattacharya , Kyung-ho Park , Yasushiro Nishioka
DOI: 10.1143/JJAP.33.5231
关键词: Dielectric 、 Strontium titanate 、 Amorphous solid 、 Annealing (metallurgy) 、 Crystal structure 、 Materials science 、 Chemical engineering 、 Thin film 、 Mineralogy 、 Crystallization 、 Microstructure
摘要: A new technique to realise a low leakage current of (Ba, Sr)TiO 3 (BSTO) thin films by controlling the grain structure BSTO has been proposed. This includes deposition amorphous at 500 o C and annealing 650 in O 2 for crystallization. The film producted from one was significantly lower than that deposited directly substrate temperature C. crystalline produced found be circular. In contrast, as-grown showed columnar structures. reduction may attributed differences structures