作者: T. S. Kang , Y. S. Kim , Jung Ho Je
关键词: Materials science 、 Amorphous solid 、 Oxide 、 Thermal stability 、 Silicon 、 Analytical chemistry 、 Thin film 、 Annealing (metallurgy) 、 Crystallization 、 Alloy
摘要: The thermal stability of RuO 2 /Si(100) films in air was studied using ex situ synchrotron x-ray scattering. (110) textured film showed good due to the low surface and strain energies. However, high energies were transformed three-dimensional islands during annealing up 800 °C. We also studied, post process, interface roughness Ba x Sr 1− TiO 3 (BST)/RuO BST/Pt/Ti/SiO structures comparatively, interfaces BST/RuO /Si thermally stable 500 °C, deterioration above °C attributed crystallization amorphous BST film. Meanwhile, significantly degraded even at temperature 350 mainly formation Pt–Ti alloy Ti oxidation.