作者: Brian Bersch , Kenneth L. Knappenberger , Joshua A. Robinson , Ke Wang , Tian Zhao
DOI:
关键词: Epitaxial graphene 、 Modulation 、 Silicon carbide 、 Metal 、 Gallium nitride 、 Materials science 、 Nanotechnology 、 Graphene 、 Intercalation (chemistry) 、 Atomic species
摘要: Intercalation of atomic species through epitaxial graphene layers began only a few years following its initial report in 2004. The impact intercalation on the electronic properties is well known; however, intercalant itself can also exhibit intriguing not found nature. This suggests that shift focus studies may lead to fruitful exploration many new forms traditionally 3D materials. In forward-looking review, we summarize primary techniques used achieve and characterize EG intercalation, introduce new, facile approach readily metal at graphene/silicon carbide interface. We show simple thermal evaporation-based methods effectively replace complicated synthesis realize large-scale non-refractory metals. these be extended formation compound materials based intercalation. Two-dimensional (2D) silver (2D-Ag) 2D gallium nitride (2D-GaNx) are demonstrate approaches.