A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO2
作者： E. A. Irene , V. A. Yakovlev
DOI: 10.1007/978-1-4899-1588-7_10
关键词: Silicon 、 Semiconductor 、 Thermal oxidation 、 Overlayer 、 Refractive index 、 Ellipsometry 、 Solid-state physics 、 Spectroscopy 、 Optics 、 Materials science
摘要: In this paper we report a new spectroscopic ellipsometry technique that overcomes much of the ambiguity associated with measuring an interface under film. For match refractive index overlayer immersion liquid and then perform at several angles incidence. Essentially, is optically (not physically) removed, thereby rendering ellipsometric measurement sensitive to interfacial layer which often known be chemically different than either substrate or The Si-SiO2 resulting from thermal oxidation Si, evolution annealing studied using technique.
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