Si-SiO2 interface structures on Si(100), (111), and (110) surfaces
作者： Takeo Hattori , Toshihisa Suzuki
DOI: 10.1063/1.94392
关键词:
摘要: The distributions of intermediate oxides (SiO x , 0
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sci-hub.se 参考文章(5)
Takeo Hattori, Yukimoto Hisajima, Hiroyuki Saito, Toshihisa Suzuki, Hiroshi Daimon, Yoshitada Murata, Masaru Tsukada, Initial stage of sputtering in silicon oxide Applied Physics Letters. ,vol. 42, pp. 244- 246 ,(1983) , 10.1063/1.93902
S. I. Raider, R. Flitsch, Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films Journal of Vacuum Science and Technology. ,vol. 13, pp. 58- 58 ,(1976) , 10.1116/1.568955
R. Haight, L. C. Feldman, Atomic structure at the (111) Si‐SiO2interface Journal of Applied Physics. ,vol. 53, pp. 4884- 4887 ,(1982) , 10.1063/1.331320
F. J. Grunthaner, P. J. Grunthaner, R. P. Vasquez, B. F. Lewis, J. Maserjian, A. Madhukar, Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS Journal of Vacuum Science and Technology. ,vol. 16, pp. 1443- 1453 ,(1979) , 10.1116/1.570218
A. Reisman, C.M. Osburn, D.L. Critchlow, 1 /spl mu/m MOSFET VLSI technology. I. An overview IEEE Journal of Solid-state Circuits. ,vol. 14, pp. 240- 246 ,(1979) , 10.1109/JSSC.1979.1051170