Semiconductor imaging device and fabrication process thereof
作者： Narumi Fujitsu Limited Ohkawa
DOI:
关键词: Electromagnetic shielding 、 Semiconductor 、 Electrical engineering 、 Diffusion 、 Substrate (electronics) 、 Fabrication 、 Optoelectronics 、 Silicon 、 Layer (electronics) 、 Materials science 、 Electrode
摘要: A semiconductor imaging device includes a photodetection region formed of diffusion first conductivity type in an active silicon substrate at side gate electrode such that top part thereof is separated from surface the and inner edge invades underneath channel right electrode, shielding layer second aligned with sidewall side, floating said wherein adjacent to region, contains impurity element concentration level lower than part.
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