Semiconductor image sensor
作者： Clifford I. Drowley , Mark S. Swenson , Shrinath Ramaswami , Jennifer J. Patterson
DOI:
关键词: Transistor 、 Charge carrier 、 Optics 、 Layer (electronics) 、 Image sensor 、 Materials science 、 Semiconductor 、 Image sensing
摘要: An image sensor (10) has an sensing element that includes N-type conducting region (26) and a P-type pinned layer (37). The two regions form P-N junctions at different depths increase the efficiency of charge carrier collection frequencies light. is formed by angle implant ensures portion can function as source MOS transistor (32).
lens.org 参考文章(21)
Yung-Chau Yen, Method for the self-aligned silicide formation in IC fabrication ,(1986)
Hiromitsu Shiraki, Nobukazu Teranishi, Yasuo Ishihara, Solid-state imaging device having a reduced image lag ,(1981)
B.C. Burkey, W.C. Chang, J. Littlehale, T.H. Lee, T.J. Tredwell, J.P. Lavine, E.A. Trabka, The pinned photodiode for an interline-transfer CCD image sensor international electron devices meeting. ,vol. 30, pp. 28- 31 ,(1984) , 10.1109/IEDM.1984.190633
Robert M. Guidash, Paul P. Lee, Teh-Hsuang Lee, Eric Gordon Stevens, Active pixel sensor integrated with a pinned photodiode ,(1996)
Takehito Hikichi, Shigeru Yamamoto, Semiconductor photoconductive device with laminated refractory metal electrode ,(1991)
Mototaka Kamoshida, Tomomitsu Satake, Sokichi Yamagishi, Sadayuki Kishi, Takashi Okada, Method of making an ohmic contact with a semiconductor substrate ,(1973)
Michio Negishi, 三千雄 根岸, Forming method of photoelectron readout part of ccd image sensor ,(1992)
Tee Suan Rii, Eritsuku Goodon Suteiibunsu, Pooru Pii Rii, Robaato Emu Gaidatsushiyu, PIN LIGHT BEAM DIODE INTEGRATED ACTIVE PICTURE ELEMENT SENSOR ,(1996)
Morishima Hiroshi, TENSION CONTROLLER FOR PAPER MACHINE ,(1992)
Kiyoshi Tanaka, Akio Hayasaka, Manufacture of multilayer interconnection material ,(1987)