Active pixel sensor integrated with a pinned photodiode
作者： Robert M. Guidash , Paul P. Lee , Teh-Hsuang Lee , Eric Gordon Stevens
DOI:
关键词: Pixel 、 Materials science 、 Optoelectronics 、 CMOS sensor 、 Node (circuits) 、 Photodiode 、 CMOS 、 Channel (digital image) 、 Process (computing) 、 Image sensing
摘要: The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps architecture. Charge within transferred charge node by transfer gate. floating diffusion coupled CMOS circuitry that can provide addressing capabilities individual pixels. Alternatively, buried channel photocapacitor be used in place photodiode.
lens.org参考文章(52)
Eric G. Stevens, CCD image sensor with improved antiblooming characteristics ,(1993)
Masaru Noda, Toshio Murakami, Signal processing circuit for solid-state camera ,(1980)
Eric G. Stevens, Output circuit for image sensor ,(1987)
Edward T. Nelson, Interline transfer CCD image sensing apparatus ,(1990)
Hiroyuki Miyake, Tsutomu Abe, Image sensor providing output image signal with reduced offset ,(1993)
Robert M. Guidash, Paul P. Lee, Teh-Hsuang Lee, Eric Gordon Stevens, Active pixel sensor integrated with a photocapacitor ,(1996)
Seo K. Lee, Uya Shinji, Charge transfer device and solid state image sensor using the same ,(1993)
Walter F. Kosonocky, Joseph Wilder, Multiple resolution image sensor ,(1989)
Jaroslav Hynecek, Charge coupled device/charge super sweep image system and method for making ,(1994)