Solid picture element

摘要: A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor substantially eliminate residual images and methods of its manufacture are disclosed. The includes buried in communication with transfer gate is selective path for the transistor. charge accumulation region located so it not contact upper surface semiconductor substrate margin 0.0 0.2 μm closer than any depletion prevention region. Methods present invention include using as mask implanting ions into at first angle form second, steeper, Alternative sifting sift end margins achieve desired geometry.