Solid state image pickup device and manufacturing method therefor
作者： Tetsunobu Kochi , Hiroki Hiyama , Toru Koizumi , Shigetoshi Sugawa , Katsuhito Sakurai
DOI:
关键词: Metal gate 、 Transistor 、 Field-effect transistor 、 Semiconductor 、 Pickup 、 Charge carrier 、 Materials science 、 Optoelectronics 、 Conductivity 、 Electrode
摘要: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes photoelectric conversion unit having first region of conductivity type, second third the and transfer MOS transistor gate electrode disposed an insulation film transferring charge carrier from fourth region. In addition, amplifying is connected to region, fifth type continuously under electrode, apart transistor.
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