Alternate method for photodiode formation in CMOS image sensors
作者： Robert M. Guidash
DOI:
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摘要: A complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) having a plurality of pixels which includes at least one entailing photodetector, transistor adjacent the photodetector silicide surface, and an insulator over photodetector. The has thickness sufficient to prevent surface from forming contains as field oxide.
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