Solid-state imaging device having a reduced image lag

摘要: A solid-state imaging device has a semiconductor substrate of one conductive type. plurality light-charge converter regions, the opposite conductivity type, are formed in substrate. charge-voltage region, substrate, converts electric charge produced by regions into voltage. At least transfer section is for transferring to region. gate and electrode controlling timing charges from section. Pulses generated with predetermined pulse potential applied The relationship VB +2φFP