CMOS active pixel sensor using a pinned photo diode

摘要: Circuit architecture of an x-y addressable image sensor, in particular to that a Complementary Metal Oxide Semiconductor (CMOS) active pixel sensor (APS). A substrate having area divided into plurality areas arranged series rows and columns, at least one control separate from the areas; pinned photodiode formed substrate; readout transistor integrated on operatively coupled through transfer gate charge voltage converter; row selection circuit for selecting area; column group pixels, areas, further comprising including double delta sampling process is compatible with CMOS technology; reset mechanism resetting floating diffusion. The present invention comprises use overlapping gates reduce overall size requirements.