PIN LIGHT BEAM DIODE INTEGRATED ACTIVE PICTURE ELEMENT SENSOR

摘要: PROBLEM TO BE SOLVED: To manufacture a pin photodiode integrated active pixel sensor, so that the sensor makes superior response to blue light and has modified dark current characteristic by method, wherein proper processes are introduced in of from technique charge-coupled device(CCD) integrate photodiodes an architecture. SOLUTION: A is device, which uses mixed process provided with photodiode(PPD) 12, result integration sensor(APS) architecture, manufactured typically complementary metal oxide semiconductor(CMOS). This new allows mixing CMOS high-performance module. The PPD 12 becomes optically operating device having transferring function 4, readout 16 through floating diffusion reset 18, arrangement XY-addresable regions each pixel. An n-type well tenology coupled CCD, for obtaining best features both technologies CCD. Thereby, defect lag image high minimized.