Switched substrate bias for MOS DRAM circuits
作者： Masaki Tsukude , Kazutami Arimoto
DOI:
关键词: Substrate (printing) 、 Threshold voltage 、 Silicon on insulator 、 Electrical engineering 、 Semiconductor 、 Dram 、 Materials science 、 State (computer science) 、 Logic gate 、 Electronic circuit
摘要: A semiconductor circuit or a MOS-DRAM wherein converting means is provided that converts substrate potential body bias between two values for MOS-FETs in logic circuit, memory cells, and operating of the MOS-DRAM, thereby raising threshold voltage when standby state lowering it active state. The includes level shift switch circuit. controlled only which are nonconducting state; this configuration achieves reduction power consumption associated with switching. Furthermore, structure where same conductivity type formed adjacent to each other, SOI preferable better results.
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