Forward body biased field effect transistor providing decoupling capacitance
作者： Siva G. Narendra , Shekhar Y. Borkar , Ali Keshavarzi , Vivek K. De
DOI:
关键词:
摘要: In one embodiment of the invention, a semiconductor circuit includes first group field effect transistors that are forward body biased and have threshold voltages second not higher than transistors. another groups The voltage source circuitry to provide signals bodies bias group. When applied, lower do group, except there may be unintentional variations in due parameter variations. Other aspects invention include decoupling method testing for leakage.
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