Semiconducter device having an emitter terminal separated from a base terminal by a composite nitride/oxide layer
作者： Mark D. Griswold , Harrison B. Haver
DOI:
关键词: Optoelectronics 、 Materials science 、 Aperture 、 Electronic engineering 、 Common emitter 、 Nitride 、 Layer (electronics) 、 Terminal (electronics) 、 Semiconductor device 、 Oxide 、 Electrical conductor
摘要: A semiconductor device (8) has an insulating layer (16) overlying a substrate (12). The first opening that defines aperture (18) extending from the to substrate, and at least portion of conductive terminal (42) is disposed in aperture. second (52) (28) separated by composite dielectric including nitride (32) oxide (30). In one approach, formed oxidation terminal.
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