Method of making nonvolatile memory devices having reduced resistance diffusion regions
作者： Chin-Yi Huang , Samuel C. Pan , Yun Chang , Huei Huarng Chen
DOI:
关键词: Optoelectronics 、 Trench 、 Non-volatile memory 、 Layer (electronics) 、 Diffusion (business) 、 Nanotechnology 、 Oxide 、 Materials science 、 Photoresist 、 Electrical conductor 、 Substrate (electronics)
摘要: A method is described for manufacturing nonvolatile memory devices having reduced resistance diffusion regions. One embodiment of the includes forming a multilayer structure over substrate which tunnel oxide layer, polysilicon and an etch stop layer. photoresist masking process performed on to define gates device. spacer layer then deposited etched back form sidewall spacers adjacent gates. The width used source drain regions, trenches between Trenches are formed using high selectivity etches through faster than conductive area device regions desired trench configuration. filled with insulating material.
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