Near infrared electroluminescence from neodymium complex-doped polymer light emitting diodes
作者： A. O'Riordan , E. O'Connor , S. Moynihan , P. Nockemann , P. Fias
DOI: 10.1016/J.TSF.2005.10.071
关键词: Light-emitting diode 、 PEDOT:PSS 、 Materials science 、 Quantum efficiency 、 Photochemistry 、 OLED 、 Optoelectronics 、 Electroluminescence 、 Neodymium 、 Dopant 、 Indium tin oxide
摘要: Abstract Organic light emitting diode devices employing organometallic Nd(9-hydroxyphenalen-1-one)3 complexes as near infrared emissive dopants dispersed within poly(N-vinylcarbazole) (PVK) host matrices have been fabricated by spin-casting layers of the doped polymer onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates. Room temperature electroluminescence, centered at ∼1065 nm, was observed from top contacted evaporated aluminum or calcium metal cathodes and assigned to transitions between 4F3 / 2 → 4I11 / 2 levels Nd3+ ions. In particular, a irradiance 8.5 nW/mm2 an external quantum efficiency 0.007% achieved using glass/ITO/PEDOT/PVK:Nd(9-hydroxyphenalen-1-one)3/Ca/Al devices.
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