Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

摘要: Scanning and transmission electron microscopies have been used to study silicon substrate texturing whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, the nanometer micrometer range of mono- as-cut multicrystalline silicon, was observed after deposition WSi2 particles that acted as mask for subsequent radical etching. Simultaneous long residence time low H2 flow rate with high pressure. The whiskers formed via vapor-solid-solid growth, which deposited catalysts metal-induced layer exchange process well below eutectic temperature. In this process, SiHx species, by etching H radicals, diffuse through metal particles. This leads crystalline solid-phase crystallization. Transmission microscopy, diffraction, x-ray en...