Influence of oxidation parameters on atomic roughness at the Si‐SiO2 interface
作者： P. O. Hahn , M. Henzler
DOI: 10.1063/1.329221
关键词: Electron diffraction 、 Interference (wave propagation) 、 Transmission electron microscopy 、 Low-energy electron diffraction 、 Analytical chemistry 、 Diffraction 、 Surface finish 、 Cathode ray 、 Materials science 、 Electron 、 Molecular physics
摘要: … roughness, which may be decreased by low oxidation rates and appropriate annealing in nonoxidizing atmosphere. … how oxidation parameters determine the roughness at the interface, …
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