Method of manufacturing photoelectric conversion device
作者： Fumito Isaka , Koji Dairiki , Sho Kato
DOI:
关键词: Phase (matter) 、 Electrode 、 Materials science 、 Electronic engineering 、 Optoelectronics 、 Intrinsic semiconductor 、 Substrate (electronics) 、 Single crystal 、 Impurity 、 Semiconductor 、 Layer (electronics)
摘要: A fragile layer is formed in a region at depth of less than 1000 nm from one surface single crystal semiconductor substrate, and first impurity electrode are the side. After bonding supporting substrate separated using or vicinity as separation plane, thereby forming over substrate. An amorphous on layer, second by heat treatment for solid phase growth layer. having conductivity type opposite to that
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