Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors
作者： Y. Song , M.E. Kim , A.K. Oki , M.E. Hafizi , W.D. Murlin
DOI: 10.1109/23.45418
关键词: Bipolar junction transistor 、 Molecular beam epitaxy 、 Fluence 、 Ohmic contact 、 Heterojunction 、 Materials science 、 Optoelectronics 、 Field-effect transistor 、 Neutron flux 、 Neutron
摘要: The effects of neutron irradiation on 3- mu m-emitter, self-aligned-base, ohmic metal GaAs/AlGaAs heterojunction bipolar transistors and ICs based molecular beam epitaxy have been experimentally analytically investigated at fluence levels up to 1.3*10/sup 14/ n/cm/sup 2/. Devices with high DC current gain, beta , exhibited higher sensitivity than those low . At 2/, was degraded by 25% for high- devices 7% low- devices. Parasitic base components such as the emitter edge recombination seem be key factor determining sensitivity. functional dependence seems follow Messenger-Spratt relation, manifested a linear increase fluence. No deterioration seen either in transistor RF characteristic or digital circuit high-speed performance due >
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