Current Dependence of the Neutron Damage Factor
作者： C. E. Ramsey , P. J. Vail
关键词:
摘要: The current dependence of the neutron damage factor for transistor beta degradation was correlated with carrier transit time across both emitter-base junction and base region a transistor. An electrical measurement related to this used generate current-independent factors 100 devices 16 types. use delay in addition based on recent work which indicated importance degradation. From it appears that graphical method can be separate components occuring depletion region. Because is independent current, single value determined given type as figure-of-merit hardness assurance when divided by gain-bandwidth product, fT, at operating current. This new "constant" should more effective than present screens because its coefficient variation smaller low currents.
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sci-hub.se 参考文章(3)
L. S. Su, G. E. Gassner, C. A. Goben, Radiation and Annealing Characteristics of Neutron Bombarded Silicon Transistors IEEE Transactions on Nuclear Science. ,vol. 15, pp. 95- 107 ,(1968) , 10.1109/TNS.1968.4325037
C. A. Goben, C. H. Irani, P. E. Johnson, Neutron Fluence and Electric Field Strength Dependencies of the Rate of Volume Damage Introduction in Silicon P-N Junctions IEEE Transactions on Nuclear Science. ,vol. 16, pp. 43- 52 ,(1969) , 10.1109/TNS.1969.4325504
George C. Messenger, Earl L. Steele, Statistical Modeling of Semiconductor Devices for the Tree Environment IEEE Transactions on Nuclear Science. ,vol. 15, pp. 133- 139 ,(1968) , 10.1109/TNS.1968.4325041