A Simple Transistor Neutron Hardness Screen Using Scattering Parameters
作者： H. J. Tausch , R. J. Antinone , R. A. Bailey
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摘要: A frequency domain model of the common emitter S21 parameter a junction transistor is derived which includes effect minority carrier transit time through active device. Using this it demonstrated that can be measured using scattering parameters. S-parameter used to predict neutron induced gain degradation. prediction accuracy approximately 5% demonstrated.
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