A Neutron Hardness Assurance Screen Based on High-Frequency Probe Measurements
作者： R. A. Bailey , M. A. Ussery , P. J. Vail
关键词: Scattering parameters 、 Linear circuit 、 Integrated circuit 、 Node (circuits) 、 Physics 、 Electronic engineering 、 Wafer 、 Alternating current 、 Transistor 、 Radiation hardening 、 Nuclear and High Energy Physics 、 Electrical and Electronic Engineering 、 Nuclear Energy and Engineering
摘要: The objective of this study was to devise wafer level AC measurement procedures as an aid the development production line radiation hardness assurance screens and controls for complex Integrated Circuits (ICs). This met using a commercially available probe associated test equipment in conjunction with removable pads connected critical circuit node points. procedure demonstrated case 100% electrical neutron effects on transistors dielectrically isolated linear circuits. Prediction accuracies (using damage factor obtained independently) averaged 4% standard deviation. only part more general program which is still progress. A number other applications are described.
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sci-hub.se 参考文章(3)
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