Optoelectronic Memory Using Two-Dimensional Materials
作者： Sidong Lei , Fangfang Wen , Bo Li , Qizhong Wang , Yihan Huang
DOI: 10.1021/NL503505F
关键词: Schottky diode 、 Pixel 、 Image sensing 、 Optoelectronics 、 Light exposure 、 Materials science 、 Image capture 、 Memory array 、 Charge carrier 、 Image sensor
摘要: An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe MoS2 atomic layers. Photogenerated charge carriers are trapped subsequently retrieved from the potential well formed by gating a 2D material Schottky barriers. The can accumulate photon-generated charges during light exposure, be read out later data processing permanent storage. of pixels was built illustrate fabricating large-scale material-based sensors capture
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