Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength Region

摘要: AlAs/GaAs superlattices were grown by molecular beam epitaxy with a GaAs quantum well width Lz of 20–160 A. An X-ray diffraction technique is shown to be practical and non-destructive method measure in an accuracy 10%. A photoluminescence measurement showed sharply peaked structure (ΔE 50 meV) indicated that the main carrier recombination process at room temperature from n=1 electron level heavy hole level. Carrier concentration dependence energy differs usual Burstein-Moss shift. The highest emission obtained was 1.77 eV (7000 A).