High-resolution double-crystal X-ray diffraction for improved assessment of modulated semiconductor structures
作者： L. Tapfer , W. Stolz , A. Fischer , K. Ploog
DOI: 10.1016/0039-6028(86)90391-2
关键词: Diffraction 、 Powder diffraction 、 Diffraction topography 、 Semiconductor 、 Materials science 、 Molecular physics 、 Electron backscatter diffraction 、 Analytical chemistry 、 Lattice constant 、 X-ray crystallography 、 Acousto-optics
摘要: Abstract The structural parameters of MBE grown modulated semiconductor structures composed AlAs/GaAs and Ga 0.47 In 0.53 As/Al 0.48 0.52 As are investigated by high-resolution doublecrystal X-ray diffraction. A semi-kinematical approximation the dynamical diffraction theory is used to analyze observed curve. Comparison experimental theoretical data yields information on strain distribution, variation period, chemical composition homogeneity, quality heterointerfaces. Interface broadening lattice period less than one constant can be detected.
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