Structural and optical investigations of 120 keV Ag ion implanted ZnO thin films
作者： S.K. Singh , R. Singhal
DOI: 10.1016/J.TSF.2018.03.063
关键词: Thin film 、 Sputtering 、 Crystallite 、 Analytical chemistry 、 Ion 、 Raman spectroscopy 、 Ion beam 、 Ion implantation 、 X-ray photoelectron spectroscopy 、 Materials science
摘要: Abstract Structural as well optical modifications in zinc oxide (ZnO) thin film with Ag ion implantation were carried out the present study. The pure ZnO films synthesized by RF-magnetron sputtering technique at room temperature. 120 keV beam was used for different dose from 3 × 1014 to 3 × 1016 ions/cm2 negative facility. thickness and composition of implanted higher estimated Rutherford backscattering spectroscopy. change surface stoichiometry using X-ray photoelectron spectroscopy implantation. structural features observed diffraction (XRD). preferentially grown c-axis direction crystallite size ~10.6 nm confirmed XRD. Surface morphology atomic force microscopy revealed roughness grain increased increasing dose. transmittance decreased drastically corroborated UV–visible Raman understand lattice defects disordering during At dose, entirely oriented pattern, which can be beneficial device fabrication.
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