Studies on Evaporated Indium Tin Oxide (ITO)/Silicon Junctions and an Estimation of ITO Work Function
作者： N. Balasubramanian , A. Subrahmanyam
DOI: 10.1149/1.2085565
关键词: Work function 、 Layer (electronics) 、 Chemistry 、 Optoelectronics 、 Current density 、 Mineralogy 、 Silicon 、 Charge carrier 、 Tin oxide 、 Evaporation (deposition) 、 Indium tin oxide
摘要: An estimate for the work function ― has been obtained from electrical properties of ITO/n-Si et ITO/p-Si junctions. Since evaporation method preparing junctions does not seem to involve any process that may create some kind charged layer on silicon surface, estimated seems be realistic
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