Spray pyrolysis deposition for indium oxide doped with different impurities

摘要: Abstract Spray pyrolysis including the doping process of impurities different valence for preparation transparent conductive indium oxide thin films is investigated. In this work, oxidized Si wafers and pyrex glass slides are used as substrates. Low concentration InCl 3 -methanol solution main source chemical with ZnCl 2 , SbCl TeCl 4 additives dopants. The deposition film properties characterized functions various parameters substrate temperature, flow rate concentrations reactants. general, rates optimized to reach 40 50 nm/min at temperature between 300 °C 325 °C. All smooth in visible IR range radiation transparency greater than 90%. refractive index 1.8 2.1. resistivity O without × 10 −3 8 Ω-cm. It increases Zn by an order magnitude while decreases Sb Te lowest from reaches 5 −4