作者: N.G. Pramod , S.N. Pandey
DOI: 10.1016/J.CERAMINT.2013.09.084
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摘要: Abstract Indium oxide thin films (undoped and Sb doped) have been grown by a chemical spray pyrolysis technique on glass substrates using indium nitrate antimony trichloride as the host dopant precursors respectively deionsied water solvent. In addition to studying acetone sensing properties, effect of doping structural, optical, electrical properties 2 O 3 film has investigated. X-ray diffraction analyses reveal that are polycrystalline in nature, possess cubic structure, crystallite sizes range 8–15 nm. The Sb-doped reduced crystallinity size compared undoped film. A change optical transmittance visible region well value band gap is observed upon doping. Further, incorporation also alters resistivity over wide temperature. gas investigated for various concentrations air at different operating temperatures. Among all four examined, 1.5 at.% shows highest region, least room temperature response (~95%) vapor an 300 °C concentration 80 ppm air.