Studies of electrical and optical properties of SnO2:P films

摘要: The preparation and properties of phosphorus-doped SnO2 films, deposited on a heated borosilicate glass using the chemical vapour deposition, are reported in this paper. It is observed that resistivity film decreases its carrier concentration increases as doping phosphorus up to 3.7 wt.%. lowest for wt.% at optimum temperature 400°C. mobility with P, attaining maximum value 30×10−4m2V−1s−1, thereafter it falls off further concentration. Seebeck coefficient variation different concentrations confirms degenerate nature film. transmission figure merit wavelength region 500–800 nm found be 83% 17 × 10−3 Ω−1 respectively. optical band gap 3.68 eV. X-ray diffraction pattern P solution shows peaks (110), (101), (200) (211). At higher phosphorus, undergoes crystalline-to-amorphous transition.