作者: Benny Joseph , P. K. Manoj , V. K. Vaidyan
DOI: 10.1007/BF02711242
关键词:
摘要: The preparation of indium doped zinc oxide films is discussed. Variation structural, electrical and optical properties the with acetate concentration in solution are investigated. XRD studies have shown a change preferential orientation from (002) to (101) crystal plane increase dopant concentration. Films deposited at optimum conditions low resistivity 1.33 x 10-4Ωm 94% transmittance 550 nm. SEM smooth polycrystalline morphology films. Figure merit evaluated data.