Polycrystalline ZnO–In2O3 thin films as gas sensors
作者： A.P. Rambu , D. Sirbu , N. Iftimie , G.I. Rusu
DOI: 10.1016/J.TSF.2011.04.158
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摘要: Abstract Polycrystalline ZnO–In 2 O 3 thin films were prepared by thermal oxidation in air of metallic Zn–In deposited onto glass substrates evaporation under vacuum. Different conditions (oxidation temperature, time, heating rate) used order to prepare homogeneous that can be as gas sensors. structure the as-obtained was confirmed X-ray and electron diffraction investigations. The electrical conductivity various film samples ranged between 0.84 6.44 (Ω cm) − 1 . Gas sensitivity six different gasses (ammonia, methane, LPG, acetone, ethanol formaldehyde) evaluated it found highest obtained for ammonia.
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