作者: Tandrima Chaudhuri , Arijit De , Prasanta Kr. Biswas
DOI: 10.1080/0371750X.2003.11012111
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摘要: Conductive and transparent thin films of F-doped SnO 2 were deposited on soda lime silica glass by utilizing the sol-gel dipping technique. The chosen composition Sn : F in precursor sol was range 99 1 to 97 3 (atomic ratio). developed (thickness 0.1 - 0.8 pm; refractive index 1.6-2.0) cassiterite phase. Resistivity V-type with increase content passed through a minimum at = 97.5 2.5. Visible transmission (89%-50%) dependent film thickness its index. Microstructure indicated porous surface feature.