Limits to etch resistance for 193-nm single-layer resists

摘要: An important aspect of single-layer resist use at 193-nm is the inherently poor etch resistance polymers currently under evaluation for use. In order to provide information necessary process selection 193 nm, we have projected ultimate possible in transparent based on a model developed. First, data base rates was assembled various alicyclic methacrylates. This has been used develop an empirical structure-property relationship predicting polymer relative novolac-based resist. takes functional form normalized rate equals -3.80r3 plus 6.71r2 minus 4.42r 2.10, where r mass fraction existing as cyclic carbon. From this analysis, it appears though methacrylate resists equal deep UV will be possible. Early generations methacrylate-based were also evaluated actual IC steps, and those results are presented with brief discussion how new plasma chemistries may able further enhance selectivity.© (1996) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract permitted personal only.