作者: Manqing Tan , Xuming Wu , Xiaodong Wang
DOI:
关键词: Electrode 、 Substrate (electronics) 、 Waveguide 、 Distributed Bragg reflector 、 Ohmic contact 、 Laser 、 Band gap 、 Optoelectronics 、 Layer (electronics) 、 Materials science
摘要: The laser device includes a substrate; Bragg reflector prepared on the low limiting layer reflector; waveguide layer, and band gap wavelength of being as indium-gallium-arsenic-phosphor material in 1.2 micron; an active region layer; up region, at middle ohmic contact is located two sides electrode underside substrate.