High pressure MOCVD reactor system
作者： Victor E. Haven
DOI:
关键词: Atmosphere 、 Chemical vapor deposition 、 High pressure 、 Substrate (chemistry) 、 Scientific method 、 Reactor system 、 Epitaxy 、 Materials science 、 Environmental chemistry 、 Metalorganic vapour phase epitaxy 、 Chemical engineering
摘要: An apparatus and method is disclosed for providing vapor-phase epitaxial growth on a substrate using Metal Organic Chemical Vapor Deposition (MOCVD) process. The process performed in reactive chamber pressurized to greater than one atmosphere. reactant gases be deposited the are also equivalent pressure, then introduced into reactor chamber. By performing MOCVD at pressure atmosphere, reduced amount of gas required complete deposition
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