Ultraviolet (uv) and plasma assisted metalorganic chemical vapor deposition (mocvd) system
作者： Venkat Selvamanickam , Hee-Gyoun Lee
DOI:
关键词: Monatomic ion 、 Thin film 、 Chemical vapor deposition 、 Ion source 、 Analytical chemistry 、 Deposition (phase transition) 、 Ultraviolet 、 Oxygen 、 Chemistry 、 Metalorganic vapour phase epitaxy
摘要: The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. UV-assisted MOCVD includes UV source that irradiates zone and improves thin film growth rate. further enhances excitation precursor vapors utilizes an atmosphere monatomic oxygen (O) rather than more conventional diatomic (O2) in order to optimize reaction kinetics thereby increase In alternate embodiment, microwave plasma injector substituted source.
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