作者: Takehiko Soda
DOI:
关键词: Image sensor 、 Semiconductor 、 Insulator (electricity) 、 Solid-state 、 Optics 、 Optoelectronics 、 Transmittance 、 Photoelectric effect 、 Materials science 、 Reflectivity
摘要: An image sensor includes a semiconductor layer having first and second faces, wiring structure arranged on side of the face, wherein photoelectric converters are in light is incident face. The reflection portions regions for at least some converters, absorbing around regions, an insulator portion to surround portions, interlayer insulating film between face group portion, reflectance smaller than transmittance portion.