Backside illuminated image sensor and manufacturing method therefor

摘要: The present invention relates to a backside illuminated image sensor and manufacturing method therefor. comprises: silicon wafer layer, which comprises photodiode for generating an electrical signal by sensing light, wherein the layer is provided with front surface back surface; rear-end on of transistor gate, gate oxide wire dielectric layer; light incidence micro-lens filtering film further light-absorbing in pre-set position used absorbing ray transmitted from layer. employed absorbs device thereby greatly reducing chance that reflected other pixels, so as reduce mutual crosstalk between adjacent pixels.