Optical spectroscopy and field‐enhanced emission of an oxide trap induced by hot‐hole injection in a silicon metal‐oxide‐semiconductor field‐effect transistor
作者： M. Bourcerie , J. C. Marchetaux , A. Boudou , D. Vuillaume
DOI: 10.1063/1.102058
关键词: Analytical chemistry 、 Electric field 、 Field-effect transistor 、 Field (physics) 、 Photoionization 、 Transistor 、 Spectroscopy 、 Optoelectronics 、 Silicon 、 Oxide 、 Chemistry
摘要: The oxide traps created by hot‐hole injection in the thin gate of n‐type metal‐oxide‐semiconductor transistor are optically and electrically characterized. Photodepopulation spectroscopy is used to investigate their photodetrapping kinetics. A threshold at 3 eV found for photoionization cross section. effect electric field on emission analyzed using Poole–Frenkel model. We show that a localized energy level range 2–3 below SiO2 conduction band associated with trap. It spatially above drain region transistor.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(5)
Jacques Bourgoin, Michel Lannoo, Point Defects in Semiconductors II Springer Series in Solid-State Sciences. ,(1983) , 10.1007/978-3-642-81832-5
J. Frenkel, On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors Physical Review. ,vol. 54, pp. 647- 648 ,(1938) , 10.1103/PHYSREV.54.647
H.H. Poole, VIII. On the dielectric constant and electrical conductivity of mica in intense fields Philosophical Magazine Series 1. ,vol. 32, pp. 112- 129 ,(1916) , 10.1080/14786441608635546
P. Heremans, R. Bellens, G. Groeseneken, H.E. Maes, Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs IEEE Transactions on Electron Devices. ,vol. 35, pp. 2194- 2209 ,(1988) , 10.1109/16.8794
W. Weber, M. Brox, F. Hofmann, H. Huber, D. Jäger, D. Rieger, Spectroscopic investigation of oxide states responsible for hot‐carrier degradation Applied Physics Letters. ,vol. 54, pp. 168- 169 ,(1989) , 10.1063/1.101218